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US 9,435,026 B2Granted
Film deposition apparatus
AssigneeTokyo Electron Limited
InventorsYu Wamura, Tomonori Kuwamoto
Life of this patent
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Abstract
In discharging a source gas from a first process gas nozzle, rectifying members including a coolant flow passage provided in a concertinaing manner therein are arranged both sides of the first process gas nozzle. Then, a coolant at a temperature higher than a liquefaction temperature of the source gas and lower than a thermal decomposition temperature of the source gas is flown through the coolant flow passage, by which the first process gas nozzle is cooled through the rectifying member.
Claims6
A film deposition apparatus, comprising:
- a vacuum chamber;
- a turntable provided in the vacuum chamber and configured to rotate a substrate receiving area to receive a substrate;
- a heating mechanism configured to heat the substrate on the turntable;
- a gas injector extending in a direction crossing a moving path of the substrate on the turntable and having a plurality of gas discharge holes formed along the direction crossing the moving path to supply a source gas to the substrate receiving area;
- a rectifying member arranged on an upstream side and a downstream side of the gas injector in a rotational direction of the turntable so as to extend along a longitudinal direction of the gas injector and to include a coolant flow passage formed therein;
- a coolant supply port and a coolant discharge port to circulate a coolant through the coolant flow passage;
- a reaction gas supply part to supply a reaction gas to react with the source gas to the substrate receiving area and to be positioned away from the gas injector in a circumferential direction of the turntable;
- and
- an exhaust port to evacuate the vacuum chamber.
6 more elements
Dependencies are inferred from the claim text.