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US 9,233,839 B2Granted
MEMS device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chia Liu, Chia-Hua Chu, Jung-Huei Peng, Kuei-Sung Chang, Chun-Wen Cheng
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Abstract
A method for forming a MEMS device is provided. The method includes the following steps of providing a substrate having a first portion and a second portion; fabricating a membrane type sensor on the first portion of the substrate; and fabricating a bulk silicon sensor on the second portion of the substrate.
Claims17
A method for forming a microelectromechanical systems (MEMS) device, comprising:
- providing a substrate having a first portion and a second portion;
- fabricating a membrane type sensor on the first portion of the substrate;
- and
- fabricating a bulk silicon sensor on the second portion of the substrate,
- wherein fabricating the membrane type sensor further comprises:
- providing a conductive base over the substrate;
- providing a sacrificial layer over the conductive base;
- providing a reference element over the sacrificial layer;
- providing a dielectric layer over the reference element;
- removing a portion of the sacrificial layer between the reference element and the conductive base using a plurality of holes extending through the dielectric layer and the reference element to the sacrificial layer to form a first cavity of the membrane type sensor between the reference element and the conductive base;
- forming a sealing layer above the dielectric layer to seal the first cavity of the membrane type sensor by using Titanium as the sealing layer;
- and
- patterning the sealing layer over the reference element.
10 more elements
A method for forming a microelectromechanical systems (MEMS) device, comprising:
- providing a substrate having a first portion and a second portion;
- fabricating a membrane type sensor on the first portion of the substrate;
- and
- fabricating a bulk silicon sensor on the second portion of the substrate, wherein fabricating the membrane type sensor further comprises:
- providing a conductive base over the substrate;
- providing a sacrificial layer over the conductive base;
- providing a reference element over the sacrificial layer;
- providing a dielectric layer over the reference element;
- removing a portion of the sacrificial layer between the reference element and the conductive base using a plurality of holes extending through the dielectric layer and the reference element to the sacrificial layer to form a first cavity of the membrane type sensor between the reference element and the conductive base;
- forming a sealing layer above the dielectric layer to seal the first cavity of the membrane type sensor;
- and
- patterning the sealing layer over the reference element.
9 more elements
A method for forming a microelectromechanical systems (MEMS) device, comprising:
- providing a substrate having a first portion and a second portion;
- fabricating a membrane type sensor on the first portion of the substrate;
- fabricating a bulk silicon sensor on the second portion of the substrate;
- and
- forming a getter by using Titanium in the membrane type sensor and the bulk silicon sensor,
- wherein fabricating the membrane type sensor on the first portion of the substrate further comprises:
- forming a first cavity in the membrane type sensor;
- and forming a sealing layer by using Titanium to seal the first cavity of the membrane type sensor.
5 more elements
A method for forming a microelectromechanical systems (MEMS) device, comprising:
- providing a substrate having a first portion and a second portion;
- fabricating a membrane type sensor on the first portion of the substrate;
- fabricating a bulk silicon sensor on the second portion of the substrate;
- and
- forming a getter by using Titanium in the membrane type sensor and the bulk silicon sensor, wherein fabricating the bulk silicon sensor further comprises:
- forming an oxide layer over a sealing layer and a dielectric layer;
- patterning the oxide layer to provide a first cavity of the bulk silicon sensor;
- bonding a silicon layer to the oxide layer;
- and
- patterning the silicon layer over the second portion of the substrate to form a plurality of silicon structures of the bulk silicon sensor.
7 more elements
Dependencies are inferred from the claim text.