Methods of forming a capacitor and contact structures

A method comprising of forming a capacitor and contact structures, the method comprising;

• providing a structure comprising a conductive structure and a lower electrode of the capacitor;
• forming a non-conductive diffusion harrier layer over the conductive structure and the lower electrode of the capacitor;
• providing a layer of conformal material above the conductive structure, and above the lower electrode of the capacitor;
• etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure;
• forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor or the upper electrode of the capacitor;
• and
• further comprising replacing the non-conductive diffusion barrier layer over the lower electrode of the capacitor with a portion of a dielectric layer, the portion of the dielectric layer residing between the lower electrode and upper electrode of the capacitor, and the non-conductive diffusion barrier layer remaining disposed over the conductive structure.

A method comprising of forming a capacitor and contact structures, the method comprising:

• providing a structure comprising a conductive structure and a lower electrode of the capacitor;
• forming a non-conductive diffusion barrier layer over the conductive structure and the lower electrode of the capacitor;
• providing a layer of conformal material above the conductive structure, and above the lower electrode of the capacitor;
• etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure;
• forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contactor one of the lower electrode of the capacitor or the upper electrode of the capacitor;
• and
• further comprising replacing the non-conductive diffusion barrier layer over the lower electrode of the capacitor with a portion of a hard mask layer, the portion of the hard mask layer residing between the lower and upper electrodes of the capacitor, and the non-conductive diffusion barrier layer remaining disposed over the conductive structure.