Semiconductor device and method for forming the same

A method of forming a semiconductor device, comprising:

• forming a semiconductor layer on a substrate;
• forming a barrier layer on the semiconductor layer;
• and
• forming an insulating layer on the barrier layer by using a deposition method using plasma,
• wherein the semiconductor layer includes an oxide semiconductor including at least one of indium, tin, and zinc,
• wherein the barrier layer includes a first oxide including at least one of indium, tin and zinc and a second oxide including another material including at least one of a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor,
• wherein the insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride,
• wherein the insulating layer includes a portion which contacts with an upper surface of the barrier layer,
• wherein the barrier layer is formed of one layer with the second oxide added in the first oxide,
• wherein the barrier layer contacts the semiconductor layer,
• wherein the second oxide of the barrier layer includes at least one selected from a group including, gallium, yttrium, niobium, magnesium, hafnium, titanium, lanthanum, lithium, scandium, barium, strontium, or zirconium, and
• wherein the second oxide has a higher combination force with oxygen than the oxide semiconductor of the semiconductor layer.

A method of forming a semiconductor device, comprising:

• forming a gate electrode on a substrate;
• forming a gate insulating layer on the gate electrode;
• forming a semiconductor layer on the gate insulating layer, wherein the semiconductor layer includes an oxide semiconductor;
• forming a barrier layer on the semiconductor layer, wherein the barrier layer includes a material including at least one of a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor;
• forming an insulating layer on the barrier layer by using a deposition method using plasma, wherein the insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride;
• forming an etch stopper on the barrier layer;
• forming a source electrode and a drain electrode spaced apart from the source electrode on the barrier layer;
• and
• forming a passivation layer on the source electrode and the drain electrode and wherein the passivation layer contacts with the etch stopper in a space between the source electrode and the drain electrode.