Method for processing silicon wafer
AssigneeCanon Kabushiki Kaisha
InventorsHirohisa Fujita, Shuji Koyama, Keiji Matsumoto, Kenta Furusawa
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Abstract
A method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed.
Claims18
A method for processing a silicon wafer, the method comprising:
- allowing an etchant, which is a liquid, to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side,
- wherein the apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant,
- wherein the first aperture and the second aperture are subjected to different processes after being formed, and
- wherein, among the apertures arranged in the line, each aperture formed downstream of the first aperture in the flow direction of the etchant is subjected to the same process after being formed.
A method for processing a silicon wafer, the method comprising:
- allowing an etchant, which is a liquid, to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side,
- wherein the apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant,
- wherein the first aperture and the second aperture are subjected to different processes after being formed, and
- wherein, among the apertures arranged in the line, each aperture formed downstream of the first aperture is to be used as a liquid supply port formed in a silicon substrate of a liquid ejection head, and the first aperture is not to be used as a liquid supply port formed in a silicon substrate of a liquid ejection head but to be used as a dummy aperture of the liquid supply port.
Dependencies are inferred from the claim text.