Plasma doping a non-planar semiconductor device
AssigneeAdvanced Ion Beam Technology, Inc.
InventorsTzu-Shih Yen, Daniel Tang, Tsungnan Cheng
Life of this patent
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Abstract
In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.
Claims23
A method for plasma doping a non-planar semiconductor device comprising:
- obtaining a substrate having a first non-planar semiconductor body formed thereon;
- placing the substrate into a chamber;
- forming a plasma in the chamber, the plasma containing dopant ions;
- generating a first bias voltage to implant dopant ions into a region of the first non-planar semiconductor body, wherein:
- the first bias voltage accelerates dopant ions towards the substrate;
- and
- the dopant ions accelerated by the first bias voltage are directed at the substrate at a first implant angle with respect to an axis orthogonal to the substrate;
- and
- generating a second bias voltage to implant dopant ions into the region, wherein:
- the second bias voltage accelerates dopant ions towards the substrate;
- the dopant ions accelerated by the second bias voltage are directed at the substrate at a second implant angle with respect to the axis;
- the first bias voltage is greater than the second bias voltage;
- and
- the first implant angle is less than the second implant angle.
A method for plasma doping a non-planar semiconductor device comprising:
- obtaining a substrate having a non-planar semiconductor body formed thereon;
- placing the substrate into a chamber;
- forming a plasma in the chamber, the plasma containing dopant ions;
- generating a first bias voltage to accelerate dopant ions into a region of the first non-planar semiconductor body;
- positioning an electrode screen at a first tilt angle in the chamber to cause the dopant ions accelerated by the first bias voltage to be implanted into the region at a first implant angle with respect to an axis orthogonal to the substrate;
- generating a second bias voltage to accelerate dopant ions into the region, wherein the second bias voltage is less than the first bias voltage;
- and
- positioning the electrode screen at a second tilt angle in the chamber to cause the dopant ions accelerated by the second bias voltage to be implanted into the substrate at a second implant angle with respect to the axis, wherein the second implant angle is greater than the first implant angle.
A method for plasma doping a non-planar semiconductor device comprising:
- obtaining a substrate having a non-planar semiconductor body formed thereon;
- forming, using an ion implant process, a punch through stopper layer in the non-planar semiconductor body;
- placing the substrate into a chamber;
- forming a plasma in the chamber, the plasma containing dopant ions;
- generating a first bias voltage to accelerate dopant ions into a region of the first non-planar semiconductor body, wherein the dopant ions accelerated by the first bias voltage are directed at the substrate at a first implant angle with respect to an axis orthogonal to the substrate;
- and
- generating a second bias voltage to accelerate dopant ions into the region, wherein:
- the dopant ions accelerated by the second bias voltage are directed at the substrate at a second implant angle with respect to the axis;
- the first bias voltage is greater than the second bias voltage;
- and
- the first implant angle is less than the second implant angle.
Dependencies are inferred from the claim text.