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US 9,000,510 B2Granted
Nonvolatile memory device with upper source plane and buried bit line
AssigneeSK hynix Inc.
InventorYoung-Ok Hong
Life of this patent
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Abstract
A nonvolatile memory device includes: a channel layer extending in a vertical direction from a substrate; a plurality of interlayer dielectric layers and word lines alternately stacked along the channel layer over the substrate; a bit line formed under plurality of interlayer dielectric layers and word lines, coupled to the channel layer, and extending in a direction crossing the word lines; and a common source layer coupled to the channel layer and formed over the plurality of interlayer dielectric layers and word lines.
Claims8
A nonvolatile memory device comprising:
- a channel layer extending in a vertical direction from a substrate;
- a plurality of interlayer dielectric layers and word lines alternately stacked along the channel layer over the substrate;
- a bit line formed under a plurality of interlayer dielectric layers and word lines, coupled to the channel layer, and extending in a direction crossing the word lines;
- and
- a common source layer coupled to the channel layer and formed over the plurality of interlayer dielectric layers and word lines,
- wherein the common source layer is divided into unit blocks by slits which are filled with an insulation layer.
3 more elements
Dependencies are inferred from the claim text.