Method and system for recovering from transistor aging using heating

A semiconductor device package comprising:

• a semiconductor device die comprising a semiconductor device subject to a shift in threshold voltage due to trapped charge carriers in a gate dielectric layer of the semiconductor device;
• a heating device located within the semiconductor device package and configured to selectively provide heat to the gate dielectric layer of the semiconductor device, wherein
• the heat is sufficient to decrease the shift in threshold voltage due to trapped charge carriers in the gate dielectric layer of the semiconductor device, and
• the semiconductor device die comprises the heating device;
• a gate stack of the semiconductor device, wherein the gate stack comprises
• the gate dielectric layer and a resistive layer,
• a conductive gate layer formed over the gate dielectric layer, and
• the resistive layer formed over the conductive gate layer, wherein a heater dielectric layer electrically isolates the resistive layer from the conductive gate layer,
• two or more electrical contacts to the resistive layer configured to provide an electrical current through the resistive layer, wherein
• a resistance of the resistive layer provides the heat to the gate dielectric layer in response to the electrical current.

A semiconductor device package comprising:

• a semiconductor device die comprising a semiconductor device subject to a shift in threshold voltage due to trapped charge carriers in a gate dielectric layer of the semiconductor device;
• and
• a heating device located within the semiconductor device package and configured to selectively provide heat to the gate dielectric layer of the semiconductor device, wherein
• the heat is sufficient to decrease the shift in threshold voltage due to trapped charge carriers in the gate dielectric layer of the semiconductor device, and
• the heating device comprises a heating device die thermally coupled to a major surface of the semiconductor device die.

An apparatus comprising:

• a semiconductor device package comprising
• a semiconductor device die comprising a semiconductor device subject to a shift in threshold voltage due to trapped charge carriers in a gate dielectric layer of the semiconductor device, and
• a heating device located within the semiconductor device package and configured to selectively provide heat to the gate dielectric layer of the semiconductor device, wherein
• the heating device comprises a heating device die thermally coupled to a major surface of the semiconductor device die, and
• the heat is sufficient to decrease a magnitude of the shift in threshold voltage due to trapped charge carriers in the gate dielectric layer of the semiconductor device;
• a first power source configured to supply voltage and current sufficient to operate logic of the semiconductor device die;
• and
• a second power source configured to supply voltage and current sufficient to operate the heating device, wherein the voltage and current sufficient to operate the heating device are not equal to the voltage and current sufficient to operate the logic of the semiconductor device.