Mask formation processing
AssigneeGlobalfoundries Inc.
InventorsDae Han Choi, Zhuangfei Chen, Fangyu Wu
Life of this patent
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AssigneeGlobalfoundries Inc.
InventorsDae Han Choi, Zhuangfei Chen, Fangyu Wu
Estimating the term…
A mask for use in fabricating one or more semiconductor devices is fabricated by: providing sacrificial spacing structures disposed over a substrate structure, and including protective hard masks at upper surfaces of the spacing structures; disposing a sidewall spacer layer conformally over the sacrificial spacing structures; selectively removing the sidewall spacer layer from above the sacrificial spacing structures to expose the protective hard masks of the spacing structures, the selectively removing including leaving sidewall spacers along sidewalls of the sacrificial spacing structures; providing a protective material over the substrate structure; and removing the exposed protective hard masks from the sacrificial spacing structures, and thereafter, removing remaining sacrificial spacing structures and the protective material, leaving the sidewall spacers over the substrate structure as a mask.
A method comprising:
Dependencies are inferred from the claim text.