Methods of making jogged layout routings double patterning compliant

A method, comprising:

• creating an overall target pattern comprised of a plurality of features including an odd-jogged feature, wherein the each of the plurality of features are positioned above separate routing tracks, each of which are separated from an adjacent routing track by a pitch, said odd-jogged feature having a crossover region that connects first and second line portions, wherein said crossover region spans a distance corresponding to an odd number of pitches, said crossover region having a first dimension in a first direction that is parallel to a long-axis of one of said first and second line portions;
• decomposing said overall target pattern into a first sub-target pattern and a second sub-target pattern, wherein said first sub-target pattern comprises one of said first and second line portions and a first portion of said crossover region and said second sub-target pattern comprises the other of said first and second line portions and a second portion of said crossover region;
• determining a value for said first dimension at a point where a minimum spacing between features in said first sub-target pattern is equal to or larger than 32 nm;
• generating a first set of mask data corresponding to said first sub-target pattern;
• and
• generating a second set of mask data corresponding to said second sub-target pattern.

A method, comprising:

• creating an overall target pattern comprised of a plurality of features including an odd-jogged feature, wherein the each of the plurality of features are positioned above separate routing tracks, each of which are separated from an adjacent routing track by a pitch, said odd-jogged feature having a crossover region that connects first and second line portions, wherein said crossover region spans a distance corresponding to an odd number of pitches, said crossover region having a first dimension in a first direction that is parallel to a long-axis of one of said first and second line portions;
• decomposing said overall target pattern into a first sub-target pattern and a second sub-target pattern, wherein said first sub-target pattern comprises one of said first and second line portions and a first portion of said crossover region and said second sub-target pattern comprises the other of said first and second line portions and a second portion of said crossover region;
• determining a value for an overlay distance between said jogged portions of said first and second sub-patterns at a point where a minimum spacing between features in said first sub-target pattern is equal to or larger than 32 nm;
• generating a first set of mask data corresponding to said first sub-target pattern;
• and
• generating a second set of mask data corresponding to said second sub-target pattern.

A method of transferring an overall target pattern comprised of an odd-jogged feature to a layer of material using a double patterning process, said odd-jogged feature having a crossover region that connects first and second line portions, wherein said crossover region spans a distance corresponding to an odd number of pitches between the first and second line portions, said crossover region having a first dimension in a first direction that is parallel to a long-axis of one of said first and second line portions that is greater than a second dimension of each of said first and second line portions in a second direction that is transverse to said first direction, said overall target pattern comprising a first sub-target pattern and a second sub-target pattern, the method comprising;

• performing a first etching process through a first mask layer having said first sub-target pattern defined therein to transfer the first sub-target pattern to said layer of material, wherein said first sub-target pattern comprises one of said first and second line portions that are separated by said odd number of pitches and a first portion of said crossover region of the odd-jogged feature;
• and
• performing a second etching process through a second mask layer having said second sub-target pattern defined therein to transfer the second sub-target pattern to the layer of material, wherein said second sub-target pattern comprises the other of said first and second line portions that are separated by said odd number of pitches and a second portion of said crossover region of the odd-jogged feature.