Power semiconductor module

A power semiconductor module comprising:

• a circuit board having gate, emitter, and collector patterns formed thereon;
• a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof and contacting the gate and emitter patterns, and having a collector terminal formed on the other surface thereof;
• a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof and contacting the collector terminal, and having an anode terminal formed on the other surface thereof;
• a first conductive connection member having one end disposed between and in contact with the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board, the one and the other ends of the first conductive connection member being integrally formed with each other;
• and
• a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board,
• wherein the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip face each other, and
• wherein a first area is a portion under the first semiconductor chip contacted in the gate and emitter patterns formed on the circuit board, a circumference of the first area is a second area, a portion formed at the first area of the gate pattern has a thickness thinner than a portion formed at the second area of the gate pattern, a portion formed at the first area of the emitter pattern has a thickness thinner than a portion formed at the second area of the emitter pattern, and a portion formed at the first area of the gate pattern has a thickness identical to the portion formed at the first area of the emitter pattern.