High voltage resistor with biased-well

A semiconductor device, comprising:

• a substrate doped with a first doping polarity;
• a doped well located in the substrate, the doped well having a second doping polarity opposite the first doping polarity;
• a dielectric structure located on the doped well, wherein a portion of the doped well adjacent the dielectric structure has a higher doping concentration than a remaining portion of the doped well;
• and
• an elongate polysilicon structure located on the dielectric structure;
• wherein:
• the elongate polysilicon structure has a length L;
• the portion of the doped well adjacent the dielectric structure is biased to the same voltage as a segment of the elongate polysilicon structure, the segment of the elongate polysilicon structure being located away from a midpoint of the elongate polysilicon structure by a predetermined distance that is measured along the elongate polysilicon structure;
• and
• the predetermined distance is in a range from about 0*L to about 0.1*L.

A semiconductor device, comprising:

• a substrate having a first type of conductivity;
• a doped region disposed in the substrate, the doped region having a second type of conductivity different from the first type;
• a dielectric structure disposed over a portion of the doped region;
• a resistor disposed over the dielectric structure, wherein the resistor has an elongate shape and a first distal end and a second distal end;
• a first conductive element disposed over, and electrically coupled to, the doped region;
• a second conductive element disposed over a segment of the resistor that is located in between the first distal end and the second distal end, wherein the second conductive element is in direct contact with the segment of the resistor;
• and
• a third conductive element that is electrically coupled to the first conductive element and the second conductive element
• wherein:
• the first and second conductive elements are contacts of an interconnect structure;
• and
• the third conductive element is a metal line of the interconnect structure.