Silicon controlled rectifier (SCR) device for bulk FinFET technology

A semiconductor device disposed on a semiconductor substrate, comprising:

• a shallow trench isolation (STI) region that laterally surrounds a base portion of a semiconductor fin, wherein the base portion of the semiconductor fin lies beneath an upper surface of the STI region and an upper portion of the semiconductor fin remains above the upper surface of the STI region;
• an anode region arranged in the upper portion of the semiconductor fin and having a first conductivity type;
• a cathode region arranged in the upper portion of the semiconductor fin and spaced apart from the anode region, the cathode region having a second conductivity type, which is opposite the first conductivity type;
• a first doped base region arranged at a first lateral position within the base portion of the semiconductor fin at a vertical position underneath the anode region, wherein the first doped base region has the second conductivity type;
• a second doped base region within the base portion of the semiconductor fin, wherein the second doped base region is arranged at a second lateral position such that no portion of the second doped base region vertically overlaps with the first lateral position, wherein the second doped base region has the first conductivity type;
• and
• a current control unit arranged between the anode region and the cathode region where the current control unit is arranged to selectively enable and disable current flow in the upper portion of the fin based on a trigger signal.