Methods for fabricating a cell string and a non-volatile memory device including the cell string

A method for fabricating a cell string, the method comprising:

• forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate, wherein forming the interlayer dielectric layer, the sacrificial layer, and the semiconductor pattern includes forming a plurality of interlayer dielectric layers, a plurality of sacrificial layers, and a plurality of semiconductor patterns on the semiconductor substrate;
• forming an opening by patterning the interlayer dielectric layer and the sacrificial layer, wherein forming the opening includes forming a plurality of openings by patterning the plurality of interlayer dielectric layers and the plurality of sacrificial layers;
• filling the opening with a metal without removing the sacrificial layer;
• and
• annealing the semiconductor pattern having the opening filled with the metal.

A method for fabricating a cell string, the method comprising:

• forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate;
• forming an opening by patterning the interlayer dielectric layer and the sacrificial layer;
• filling the opening with a metal;
• and
• annealing the semiconductor pattern having the opening filled with the metal,
• wherein the annealing includes heating the sacrificial layer and the metal in the opening, such that particles in the sacrificial layer are substituted with metal particles of the metal.