Method for manufacturing a plurality of chips

A method for manufacturing a plurality of chips, the method comprising:

• providing a wafer comprising plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface;
• depositing a laser absorption layer on a second main surface opposite to the first main surface;
• providing a backside metal stack on the laser absorption layer;
• applying laser light to the first main surface, wherein the laser light is focused on or above the laser absorption layer at least along the dicing lines, wherein the laser light causes a local restraint of the laser absorption layer, and wherein the local restraint inserts a predetermined breaking point into the backside metal stack;
• and
• singulating the chips along the dicing lines by using stealth dicing.

A method for manufacturing a plurality of chips, the method comprising:

• providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface;
• providing a laser absorption layer on a second main surface opposite to the first main surface;
• providing a backside metal stack on the laser absorption layer;
• applying laser light to the laser absorption layer along the dicing lines;
• and
• singulating the chips along the dicing lines by using stealth dicing, wherein applying laser light to the laser absorption layer causes a local restraint of the laser absorption layer.

A method for manufacturing a plurality of chips, the method comprising:

• providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface;
• providing a laser absorption layer on a second main surface opposite to the first main surface;
• providing a backside metal stack on the laser absorption layer;
• annealing the laser absorption layer before providing the backside metal stack;
• applying laser light to the laser absorption layer along the dicing lines;
• and
• singulating the chips along the dicing lines by using stealth dicing.

A method for manufacturing a plurality of chips, the method comprising:

• providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface;
• providing a laser absorption layer on a second main surface opposite to the first main surface;
• providing a backside metal stack on the laser absorption layer;
• applying laser light to the laser absorption layer along the dicing lines;
• and
• singulating the chips along the dicing lines by using stealth dicing, wherein applying laser light to the laser absorption layer forms an area comprising a laser illumination reaction product of the wafer and the laser absorption layer.