Method of cleaning semiconductor manufacturing apparatus, semiconductor manufacturing apparatus, and management system
AssigneeKabushiki Kaisha Toshiba
InventorsKenichiro Toratani, Takashi Nakao
Life of this patent
Estimating the term…
Abstract
In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.
Claims12
A method of cleaning a semiconductor manufacturing apparatus, the method comprising:
- simultaneously supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber and an inert gas through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from n exhaust pipe of the treatment chamber per unit time;
- and
- supplying the inert gas while stopping the supply of the cleaning gas to increase a pressure in the treatment chamber and to fill the supply pipe with the inert gas after the cleaning gas and the inert gas are simultaneously supplied.
Dependencies are inferred from the claim text.