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US 8,772,907 B1Granted
Anti-fuse structure and anti-fuse programming method
AssigneeUnited Microelectronics Corp.
InventorChih-Yuan Ho
Life of this patent
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Abstract
An anti-fuse structure includes a substrate having at least a shallow trench isolation formed therein, a notch formed between the substrate and the STI, an electrode structure formed on the substrate, the electrode structure filling the notch, and a doped region formed in the substrate on a side of the electrode structure opposite to the notch.
Claims10
An anti-fuse structure comprising:
- a substrate having at least a shallow trench isolation (STI) formed therein;
- a notch formed between the substrate and the STI;
- a electrode structure formed on the substrate, the electrode structure filling the notch;
- and
- a doped region formed in the substrate on a side of the electrode structure opposite to the notch.
2 more elements
An anti-fuse programming method comprising:
- providing an anti-fuse structure, and the anti-fuse structure comprising:
- a substrate having at least a STI formed therein;
- a notch formed between the substrate and the STI;
- an electrode structure formed on the substrate, the electrode structure filling the notch;
- and
- a doped region formed in the substrate on a side of the electrode structure opposite to the notch;
- providing a programming voltage to the anti-fuse structure;
- and
- forming a rupture point located at the notch.
6 more elements
Dependencies are inferred from the claim text.