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US 8,772,904 B2Granted
Semiconductor structure and process thereof
AssigneeUnited Microelectronics Corp.
InventorsChih-Chien Liu, Chia-Lung Chang, Jei-Ming Chen, Jui-Min Lee, Yuh-Min Lin
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Abstract
A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided.
Claims6
A semiconductor structure located in a recess of a substrate, and the semiconductor structure comprising:
- a liner located on the surface of the recess;
- a silicon rich layer located on the liner, wherein the silicon rich layer comprises an oxygen-containing silicon rich layer and the oxygen content of the oxygen-containing silicon rich layer has a gradient distribution;
- and
- a filling material located on the silicon rich layer and filling the recess.
1 more element
Dependencies are inferred from the claim text.