US 8,772,877 B2 · Tunnel field-effect transistor

Abstract

A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.

Claims23

Dependent claims

A tunnel field-effect transistor, comprising:

at least a source region comprising a corresponding source semiconductor material;
at least a drain region comprising a corresponding drain semiconductor material;
and at least a channel region comprising a corresponding channel semiconductor material, which is arranged between and in contact with said source region and said drain region, said tunnel field-effect transistor further comprising:
at least a source-channel gate electrode provided on top of and overlapping at least an interface between said source region and said channel region;
at least an insulator corresponding to said source-channel gate electrode that is provided between said source-channel gate electrode and at least said interface between said source region and said channel region;
at least a drain-channel gate electrode provided on top of and overlapping at least an interface between said drain region and said channel region;
and
at least an insulator corresponding to said drain-channel gate electrode that is provided between said drain-channel gate electrode and at least said interface between said drain region and said channel region.

5 more elements

A method for fabricating a tunnel field-effect transistor, comprising:

providing at least a source region comprising a corresponding source semiconductor material;
providing at least a drain region comprising a corresponding drain semiconductor material;
and providing at least a channel region comprising a corresponding channel semiconductor material, which is arranged between and in contact with said source region and said drain region, said method further comprising:
providing at least a source-channel gate electrode on top of and overlapping at least an interface between said source region and said channel region;
providing at least an insulator corresponding to said source-channel gate electrode between said source-channel gate electrode and at least said interface between said source region and said channel region;
providing at least a drain-channel gate electrode on top of and overlapping at least an interface between said drain region and said channel region;
and
providing at least an insulator corresponding to said drain-channel gate electrode between said drain-channel gate electrode and at least said interface between said drain region and said channel region.

5 more elements

Dependencies are inferred from the claim text.

Tunnel field-effect transistor

Life of this patent

Tunnel field-effect transistor

Life of this patent

Abstract

Claims23