Enhanced stripping of implanted resists
AssigneeArizona Board of Regents on Behalf of the University of Arizona
InventorsSrini Raghavan, Rajkumar Govindarajan, Manish Keswani
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Abstract
A benign all-wet process for stripping photoresist after an implantation process performed to fabricate a device is provided. A method of stripping implanted resist includes a first step of disrupting a crust formed on the surface of the resist during the implantation process and then removing the underlying resist. In accordance with embodiments of the invention, a catalyzed hydrogen peroxide (CHP) chemical system is used to disrupt the crust and allow for low temperature (<180° C.) removal of the underlying resist.
Claims19
A method of stripping implanted resist, the method comprising:
- disrupting a crust on a resist to expose at least a portion of underlying resist by applying a catalyzed hydrogen peroxide propagation (CHP) chemical system, wherein the CHP chemical system comprises about 5-25% H2O2;
- and
- removing the underlying resist by applying an etchant to the resist after disrupting the crust.
A method of fabricating a semiconductor device using deep UV lithography, the method comprising:
- implanting ions at a dose of at least 1015/cm2 into a wafer having a deep UV resist pattern thereon;
- and
- stripping the implanted deep UV resist pattern, wherein stripping the implanted deep UV resist pattern comprises:
- using a CHP chemical system to disrupt a crust formed on the deep UV resist during the implanting of the ions, wherein the CHP chemical system comprises about 5-25% H2O2;
- and
- removing the deep UV resist underlying the disrupted crust by applying a sulfuric acid-peroxide mixture (SPM) after disrupting the crust using the CHP chemical system.
Dependencies are inferred from the claim text.