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US 8,772,137 B2Granted
Semiconductor wafer with assisting dicing structure and dicing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, Shih-Hsun Hsu
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Abstract
A semiconductor wafer with an assisting dicing structure. The wafer comprises a substrate having a front surface and a rear surface. The front surface of the substrate comprises at least two device regions separated by at least one dicing lane. The rear surface of the substrate comprises at least one pre-dicing trench formed therein and substantially aligned with the dicing lane. A method for dicing a semiconductor wafer is also disclosed.
Claims12
A method for dicing a semiconductor wafer, comprising:
- providing a semiconductor wafer having a front surface and a rear surface, wherein the front surface of the semiconductor wafer comprises at least two device regions separated by at least one dicing lane;
- forming a plurality of pre-dicing trenches in the rear surface of the semiconductor wafer and without passing therethrough and substantially aligned with the dicing lane, wherein the plurality of pre-dicing trenches are arranged in a line extending along an extending direction of the dicing lane and each pre-dicing trench has a width less than that of the dicing lane;
- and
- sawing through the semiconductor wafer, such that the sawing cuts partially through the plurality of pre-dicing trenches.
1 more element
Dependencies are inferred from the claim text.