Method of manufacturing an extreme ultraviolet mask
AssigneeSK hynix Inc.
InventorJae In Moon
Life of this patent
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Abstract
A method of manufacturing an extreme ultraviolet (EUV) mask includes forming a first multi-layered thin film over a quartz substrate, forming a structure pattern over the first multi-layered thin film, and forming a second multi-layered thin film over the structure pattern and the first multi-layered thin film. The second multi-layered thin film is formed so that a periodicity of the second multi-layered thin film formed over the structure pattern is different from a periodicity of the second multi-layered thin film formed over the first multi-layered thin film.
Claims11
A method of manufacturing an extreme ultraviolet (EUV) mask, the method comprising:
- forming a first multi-layered thin film over a quartz substrate;
- forming a structure pattern over the first multi-layered thin film;
- and
- forming a second multi-layered thin film over the structure pattern and the first multi-layered thin film,
- wherein a periodicity of the second multi-layered thin film formed over the structure pattern is different from a periodicity of the second multi-layered thin film formed over the first multi-layered thin film.
Dependencies are inferred from the claim text.