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US 8,710,624 B2Granted
Semiconductor device
OwnerKazuaki Tonariinventor
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Abstract
In a semiconductor device including a capacitor which has an upper electrode, a polycrystalline silicon layer on the upper electrode, and a metallic member on the polycrystalline silicon layer, the polycrystalline silicon layer includes germanium so that an upper portion of the polycrystalline silicon layer is lower than a lower portion thereof in a concentration of germanium.
Claims20
A semiconductor device comprising:
- a lower electrode formed over a semiconductor substrate;
- a dielectric film formed on the lower electrode;
- an upper electrode formed on the dielectric film;
- a polycrystalline silicon layer formed on the upper electrode;
- and
- a metallic member contacted with an upper surface of the polycrystalline silicon layer;
- wherein a concentration of germanium in an upper portion of the polycrystalline silicon layer is lower than that in a lower portion of the polycrystalline silicon layer.
4 more elements
A semiconductor device comprising:
- a cylindrical lower electrode formed over a semiconductor substrate;
- a dielectric film formed on the cylindrical lower electrode;
- an upper electrode formed on the dielectric electrode;
- a polycrystalline silicon layer which is laminated on the upper electrode;
- and
- a metallic contact plug which is located over the cylindrical lower electrode and which electrically connects the upper electrode to a metal wiring layer,
- wherein a concentration of germanium in an upper portion of the polycrystalline silicon layer is lower than that in a lower portion of the polycrystalline silicon layer.
4 more elements
Dependencies are inferred from the claim text.