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US 8,709,267 B2Granted
Double patterning method using tilt-angle deposition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChwen Yu, Fei-Gwo Tsai, Kai-Wen Cheng
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Abstract
Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer.
Claims20
A method comprising:
- forming a first resist layer over a material layer;
- forming a second resist layer over the first resist layer;
- forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant first width in the second resist layer and a tapered width in the first resist layer,
- wherein the tapered width tapers from the first width at a top portion of the first resist layer to a second width at a bottom portion of the first resist layer,
- wherein the second width is wider than the first width, and
- wherein the top portion of the first resist layer is closer to the second resist layer than the bottom portion of the first resist layer;
- and
- performing a tilt-angle deposition process to form a feature over the exposed material layer.
5 more elements
A method comprising:
- forming a photoresist layer over a material layer;
- performing a lithography process on the photoresist layer to foam an opening in the photoresist layer that exposes the material layer, the opening having an undercut profile;
- forming a feature over the exposed material layer, wherein the forming the feature includes performing at least two tilt-angle deposition processes;
- performing a first tilt-angle deposition process and a second tilt-angle deposition process, wherein the first tilt-angle deposition process and the second tilt-angle deposition process narrow the opening in the photoresist layer;
- and
- after performing the first tilt-angle deposition process and the second tilt-angle deposition process, performing a deposition process to form another feature over the exposed material layer,
- wherein the opening is defined by first and second opposing sidewalls in a topmost portion of the photoresist and third and fourth opposing sidewalls in a bottommost portion,
- wherein the first and second opposing sidewalls are spaced apart by a substantially constant width throughout,
- wherein the third and fourth opposing sidewalls are spaced apart by the substantially constant width towards the first and second opposing sidewalls and by a second width towards the material layer, and
- wherein the second width is wider than the substantially constant width.
7 more elements
A method comprising:
- forming an undercut photoresist layer over a material layer;
- forming a window-opened photoresist layer over the undercut photoresist layer, wherein the forming the window-opened photoresist layer includes exposing regions of the window-opened photoresist layer to an ultraviolet radiation;
- forming an opening that extends through the window-opened photoresist layer and the undercut photoresist layer to expose the material layer,
- wherein the opening is defined by a first width between opposing sidewalls of the window-opened photoresist layer,
- wherein the first width is substantially equal throughout the window-opened photoresist layer,
- wherein the opening is further defined by a tapered width between opposing sidewalls of the undercut photoresist layer,
- wherein the tapered width tapers from the first width adjacent the window-opened photoresist to a second width adjacent the material layer, and
- wherein the second width is wider than the first width;
- performing a first tilt-angle deposition process at a first angle to form a first feature over the exposed material layer;
- performing a second tilt-angle deposition process at a second angle to form a second feature over the exposed material layer;
- and
- after performing the first tilt-angle deposition process and the second tilt-angle deposition processes, removing the window-opened photoresist layer and the undercut photoresist layer.
9 more elements
Dependencies are inferred from the claim text.