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US 8,572,524 B2Granted
Statistical optical proximity correction
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsWenzhan Zhou, Liang Choo Hsia, Meisheng Zhou, Zheng Zou
Life of this patent
Estimating the term…
Abstract
An optical proximity correction (OPC) model incorporates inline process variation data. OPC is performed by adjusting an input mask pattern with a mask bias derived from the OPC model to correct errors in the input mask pattern.
Claims19
A method for forming an IC comprising:
- providing a substrate with a photoresist layer;
- providing a mask with a mask pattern, wherein providing the mask comprises
- deriving the mask pattern from an input mask design layout which is provided prior to forming a physical mask,
- obtaining a mask bias from an optical proximity correction (OPC) model of an OPC system with an OPC simulator, wherein the OPC system estimates critical dimension (CD) variation of one or more feature types on the input mask from measured inline process variation data of an actual wafer process line to obtain the mask bias, wherein inline process variation data includes variations in develop inspection CD and resist sidewall angle measurements profile, and
- adjusting the input mask with the mask bias to produce an adjusted input mask, and
- forming the physical mask having a physical mask pattern using the adjusted input mask;
- exposing the photoresist layer by passing radiation from an exposure source through the physical mask formed using the adjusted input mask;
- and
- developing the photoresist to transfer the physical mask pattern of the physical mask to the photoresist layer.
6 more elements
A method for forming a mask comprising the steps of:
- providing an input mask design layout which is used to form a physical mask prior to forming the physical mask;
- performing optical proximity correction (OPC) of the input mask design layout using an OPC model with an OPC simulator, wherein the OPC model incorporates measured inline process variation data of an actual wafer process line to obtain a mask bias, wherein inline process variation data includes variations in develop inspection CD and resist sidewall angle measurements profile;
- and
- forming the physical mask using the mask design layout biased with the measured inline process variation data.
1 more element
An optical proximity correction (OPC) system comprising:
- an OPC simulator comprising an OPC model which incorporates measured inline process variation data of an actual wafer process line, wherein inline process variation data includes variations in develop inspection CD and resist sidewall angle measurements profile;
- wherein the OPC simulator determines a mask bias based on the OPC model;
- and
- when an input mask design layout is provided to the OPC system prior to forming a physical mask, the OPC system applies the mask bias to adjust the input mask design layout to correct errors in the input mask design layout to produce an output mask pattern, the output mask pattern is used to form the physical mask.
1 more element
Dependencies are inferred from the claim text.