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US 8,569,900 B2Granted
Nanowire sensor with angled segments that are differently functionalized
AssigneeHewlett-Packard Development Company, L.P.
InventorsNathaniel J. Quitoriano, Theodore I. Kamins, Hans S. Cho
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Abstract
A nanowire device includes a nanowire having differently functionalized segments. Each of the segments is configured to interact with a species to modulate the conductance of a segment. The nanowire is grown from a single catalyst and the segments include a first segment at a non-linear angle from a second segment.
Claims19
A nanowire device comprising:
- at least one nanowire having a plurality of differently functionalized segments, wherein each of the segments has a conductance that modulates based on interaction with at least one species, wherein
- the segments include a first segment at a non-linear angle from a second segment, and
- the at least one species comprises a first species and a second different species, and the first segment is to change its conductive state by interacting with the first species, and the second segment is to change its conductive state by interacting with the second species.
A nanowire sensor logic device comprising:
- at least one nanowire having a first functionalized segment configured to change its conductive state by interacting with a first species, and a second differently functionalized segment configured to change its conductive state by interacting with a second species different from the first species, and the segments interacting with the species simulate operation of a logic gate,
- wherein the at least one nanowire is grown from a single catalyst and the first segment is at a non-linear angle from the second segment.
A nanowire device comprising:
- a top silicon layer;
- a middle silicon oxide layer;
- a bottom silicon layer;
- a trench in the middle silicon oxide layer;
- and
- at least one nanowire grown from a single catalyst and having a first segment and a second segment, wherein the first segment is grown at a first angle in the trench from the top silicon layer to the bottom silicon layer, and the second segment is grown at a second angle in the trench from the bottom silicon layer to the top silicon layer.
3 more elements
Dependencies are inferred from the claim text.