Semiconductor device

A chopper module comprising:

• a first control substrate;
• a second control substrate;
• a third control substrate;
• an insulated gate bipolar transistor (IGBT) leg coupled to the first control substrate;
• and
• a diode leg comprising signal pads, the signal pads configured to directly and physically couple the IGBT leg to the second control substrate and to the third control substrate via the diode leg.

A semiconductor device comprising:

• a baseplate;
• a first insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate;
• a second IGBT substrate coupled to the baseplate;
• a first diode substrate coupled to the baseplate;
• a second diode substrate coupled to the baseplate;
• a first control substrate coupled to the baseplate;
• a second control substrate coupled to the baseplate;
• and
• a third control substrate coupled to the baseplate,
• wherein the first diode substrate and the second diode substrate comprise used and unused control pads, the used control pads configured for directly and physically coupling the first IGBT substrate and the second IGBT substrate to the second control substrate and to the third control substrate.