Semiconductor device

A semiconductor device comprising:

• first and second pads arranged in a first direction;
• a first cell region being elongated in the first direction;
• a second cell region arranged between the first and second pads and the first cell region, the second cell region being elongated in the first direction;
• a sub-trunk line formed in the first cell region, the sub-trunk line being elongated in the first direction;
• a main-trunk line formed in the second cell region, the main-trunk line being elongated in the first direction;
• a first plug line extending in a second direction substantially perpendicular to the first direction and connecting the first pad to the main-trunk line at a first connecting point on the main-trunk line, the first plug line terminating in the second cell region to have no extension portion that is connected to the sub-trunk line;
• a second plug line extending in the second direction and connecting the second pad to the main-trunk line at a second connecting point on the main-trunk line, the second connecting point being distanced from the first connecting point, the second plug line terminating in the second cell region to have no extension portion that is connected to the sub-trunk line;
• and
• a third plug line extending in the second direction and connecting the sub-trunk line to the main-trunk line at a third connecting point on the main-trunk line, the third connecting point being positioned between the first connecting point and the second connecting point, the third connecting point being distanced from the first connecting point and from the second connecting point, the third plug line terminating at the third connecting point on the main-trunk line,
• wherein each of the first and second connecting points is connected through the third plug line to the sub-trunk line.

A semiconductor device comprising:

• a first pad;
• a first cell region including a first element that has a first voltage resisting characteristic, the first cell region being elongated in a first direction;
• a second cell region arranged between the first pad and the first cell region, the second cell region including a second element that has a second voltage resisting characteristic, the second voltage resisting characteristic being higher in voltage level than the first voltage resisting characteristic, the second cell region being elongated in the first direction;
• and
• a sub-trunk line formed in the first cell region, the sub-trunk line being elongated in the first direction and connected to the first element;
• a main-trunk line formed in the second cell region, the main-trunk line being elongated in the first direction and connected to the second element, the main-trunk line having first and second parts that are separate from each other;
• a first plug line extending in the second direction crossing the first direction, the first plug line including a first end portion that contacts a part of the sub-trunk line and a second end portion that contacts the first part of the main-trunk line;
• and
• a second plug line extending in the second direction, the second plug line including a third end portion that contacts the first pad and a fourth end portion that contacts the second part of the main-trunk line, the second plug line terminating in the second cell region to have no extension portion that reaches and connects to the sub-trunk line.