Nonvolatile semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorToshihiko Iinuma
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AssigneeKabushiki Kaisha Toshiba
InventorToshihiko Iinuma
Estimating the term…
According to one embodiment, a manufacturing method of a nonvolatile semiconductor storage device, includes: forming a plurality of structures above a semiconductor substrate, each of the plurality of structures being such that in a stacked film where a plurality of first semiconductor films and a plurality of second semiconductor films are stacked alternately at least the second semiconductor films are held by a semiconductor or conductor pillar member via a gate dielectric film; selectively removing the first semiconductor films from the stacked film while maintaining a state where the second semiconductor films are held by the pillar member for each of the structures; oxidizing an exposed surface for each of the structures after removing the first semiconductor films; and embedding an inter-layer dielectric film between the plurality of structures in which the exposed surface is oxidized.
A nonvolatile semiconductor storage device comprising:
A nonvolatile semiconductor storage device comprising:
Dependencies are inferred from the claim text.