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US 8,569,760 B2Granted
Thin film transistor having oxide semiconductor layer as ohmic contact layer and method of fabricating the same
AssigneeSamsung Display Co., Ltd.
InventorChun-Gi You
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Abstract
A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material.
Claims13
A method of fabricating a thin film transistor, the method comprising:
- forming a gate electrode on a substrate;
- forming a gate insulating layer on the gate electrode;
- forming an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region;
- forming source and drain electrodes on the active layer, the source and drain electrodes being separate from each other;
- and
- forming an ohmic contact layer between the active layer and at least one of the source and drain electrodes by depositing an oxide semiconductor material on the active layer and by selectively controlling an amount of oxygen flow for the oxide semiconductor material wherein the oxide semiconductor material includes at least one of Ga, Sb, Ge, Hf, and As.
3 more elements
Dependencies are inferred from the claim text.