Method of treating a semiconductor device
AssigneeMicron Technology, Inc.
InventorRoy Meade
Life of this patent
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Abstract
A method of treating a semiconductor device wherein there is provided a semiconductor device, the semiconductor device being at least in part chemically bonded to an undesired chemical species. The semiconductor device is subjected to light of a wavelength sufficient to cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species, and the semiconductor device is exposed to a source of a desired chemical species, such that the semiconductor device becomes at least in part chemically bonded to the desired chemical species.
Claims30
A method of semiconductor device manufacture comprising:
- providing a semiconductor device, the semiconductor device being at least in part chemically bonded to an undesired chemical species;
- exposing the semiconductor device to a source of a desired chemical species;
- and,
- subjecting the semiconductor device to light of a wavelength of about 4.4 micrometers to about 5.2 micrometers sufficient to selectively cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species while cleaving less or no chemical bonds between the semiconductor device and the desired chemical species, such that the semiconductor device becomes at least in part chemically bonded to the desired chemical species.
A method of semiconductor device passivation, comprising:
- providing a semiconductor device, the semiconductor device being at least in part chemically bonded to hydrogen;
- exposing the semiconductor device to a source of deuterium;
- and,
- subjecting the semiconductor device to light of a wavelength of about 4.4 micrometers to about 5.2 micrometers sufficient to selectively cleave at least some of the chemical bonds to hydrogen while cleaving less or no chemical bonds between the semiconductor device and deuterium, such that the semiconductor device becomes at least in part chemically bound to deuterium in place of hydrogen.
Dependencies are inferred from the claim text.