Semiconductor device and method of producing the same
AssigneeRenesas Electronics Corporation
InventorKazuo Tomita
Life of this patent
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Abstract
In a semiconductor device having element isolation made of a trench-type isolating oxide film 13, large and small dummy patterns 11 of two types, being an active region of a dummy, are located in an isolating region 10, the large dummy patterns 11b are arranged at a position apart from actual patterns 9, and the small dummy patterns 11a are regularly arranged in a gap at around a periphery of the actual patterns 9, whereby uniformity of an abrading rate is improved at a time of abrading an isolating oxide film 13a is improved, and surface flatness of the semiconductor device becomes preferable.
Claims7
A method of manufacturing a semiconductor device, comprising steps of:
- (a) forming grooves in a semiconductor substrate;
- (b) forming isolation regions by embedding first insulating films into the grooves, thereby an active device region, a plurality of first dummy patterns and a plurality of second dummy patterns are defined by the isolation regions;
- and
- (c) forming a MISFET in the active device region,
- wherein each of the first dummy patterns has the same planar size and is arranged with same pitch,
- wherein each of the second dummy patterns has the same planar size and is arranged with same pitch,
- wherein the planar size of each of the second dummy patterns is larger than the planar size of each of the first dummy patterns,
- wherein, in a first direction and a second direction which is perpendicular to the first direction, the first dummy patterns abut to the active device region,
- wherein, in the first direction and the second direction, the second dummy patterns abut to the active device region through the first dummy patterns, and
- wherein, in the first direction, at least one of the second dummy patterns directly abuts to the active device region without the first dummy patterns.
Dependencies are inferred from the claim text.