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US 8,558,228 B2Granted
Four-terminal metal-over-metal capacitor design kit
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chung Chen, Chi-Feng Huang, Tse-Hua Lu, Sally Liu
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Abstract
A device includes a first MOM capacitor; a second MOM capacitor directly over and vertically overlapping the first MOM capacitor, wherein each of the first and the second MOM capacitors includes a plurality of parallel capacitor fingers; a first and a second port electrically coupled to the first MOM capacitor; and a third and a fourth port electrically coupled to the second MOM capacitor. The first, the second, the third, and the fourth ports are disposed at a surface of a respective wafer.
Claims20
A device comprising:
- a wafer comprising a plurality of metal layers;
- a first metal-over-metal (MOM) capacitor comprising portions extending through a first plurality of metal layers of the wafer;
- a second MOM capacitor comprising portions extending through a second plurality of metal layers of the wafer, the second MOM capacitor being positioned directly over and vertically overlapping the first MOM capacitor, wherein each of the first and the second MOM capacitors comprises a plurality of parallel capacitor fingers;
- a first and a second port electrically coupled to the first MOM capacitor;
- and
- a third and a fourth port electrically coupled to the second MOM capacitor, wherein the first, the second, the third, and the fourth ports are disposed at a surface of the wafer and the first, the second, the third and the fourth ports are electrically disconnected from each other.
3 more elements
A device comprising:
- a wafer comprising:
- a semiconductor substrate;
- and
- a plurality of metal layers over the semiconductor substrate;
- a first and a second chip in the wafer;
- a scribe line between the first and the second chips;
- and
- a test-key in the scribe line and comprising:
- a first device-under-test (DUT) comprising:
- a first metal-over-metal (MOM) capacitor extending through a first plurality of metal layers;
- and
- a second MOM capacitor extending through a second plurality of metal layers over the first plurality of metal layers, wherein the first and the second plurality of metal layers belong to the plurality of metal layers, and wherein at least a portion of the first MOM capacitor vertically overlaps a portion of the second MOM capacitor;
- a first and a second port at a top surface of the wafer and electrically coupled to the first MOM capacitor;
- and
- a third and a fourth port at the top surface of the wafer and electrically coupled to the second MOM capacitor, wherein the first port, the second port, the third port and the fourth port are electrically disconnected from each other.
12 more elements
A device comprising:
- a wafer comprising:
- a semiconductor substrate;
- and
- a plurality of metal layers over the semiconductor substrate;
- a first and a second chip in the wafer;
- a scribe line between the first and the second chips;
- and
- a test-key in the scribe line and comprising:
- a device-under-test (DUT) comprising:
- a first metal-over-metal (MOM) capacitor extending into a bottom metal layer of the wafer;
- and
- a second MOM capacitor directly over the first MOM capacitor, and extending into a top metal layer of the wafer, wherein an entirety of the first MOM capacitor substantially overlaps an entirety of the second MOM capacitor, and wherein the first MOM capacitor is electrically disconnected from the second MOM capacitor.
9 more elements
Dependencies are inferred from the claim text.