Method for fabricating semiconductor device
AssigneeLapis Semiconductor Co., Ltd.
InventorsWataru Shimizu, Ikuo Kurachi
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device, according to the present invention includes the steps of: preparing an SOI substrate, which comprises a semiconductor supporting layer, an oxide layer formed on the semiconductor supporting layer and an SOI layer formed on the oxide layer; forming a semiconductor device on the SOI layer; forming a passivation layer over the SOI substrate, the passivation layer allowing a UV light to pass through it; and applying a UV light to the SOI substrate after the step of forming the semiconductor device is completed.
Claims17
A method for fabricating a semiconductor device, comprising:
- preparing an SOI substrate which comprises a semiconductor supporting layer, an oxide layer formed on the semiconductor supporting layer and an SOI layer formed on the oxide layer;
- forming a semiconductor device on the SOI layer;
- forming a passivation layer over the SOI substrate, the passivation layer allowing a UV light to pass through it;
- forming an aperture in the passivation layer for supplying an external electric power;
- and
- directly subsequently to forming the aperture in the passivation layer, applying a UV light to the SOI substrate to fully deplete the SOI substrate of positive electric charges.
A method for fabricating a semiconductor device, the method comprising:
- preparing an SOI substrate which comprises a semiconductor supporting layer, an oxide layer formed on the semiconductor supporting layer and an SOI layer formed on the oxide layer;
- forming a semiconductor device on the SOI layer;
- forming a passivation layer over the SOI substrate, the passivation layer allowing a UV light to pass through it;
- forming an aperture in the passivation layer for supplying an external electric power;
- and
- directly subsequently to forming the aperture in the passivation layer, applying a UV light to an interface of the oxide layer and the SOI layer of the SOI substrate to fully deplete the SOI substrate of positive electric charges.
Dependencies are inferred from the claim text.