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US 8,557,662 B2Granted
Method for fabricating side contact in semiconductor device using double trench process
AssigneeHynix Semiconductor Inc.
InventorSang-Oh Lee
Life of this patent
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Abstract
A method for fabricating a semiconductor device is provided, the method includes forming a double trench including a first trench and a second trench formed below the first trench and having surfaces covered with insulation layers, and removing portions of the insulation layers to form a side contact exposing one sidewall of the second trench.
Claims18
A method for fabricating a semiconductor device, comprising:
- forming a double trench including a first trench and a second trench formed below the first trench and having surfaces covered with insulation layers;
- removing portions of the insulation layers to form a side contact exposing a portion of one sidewall of the second trench;
- forming a junction region in an active region adjacent to the portion of the one sidewall exposed by the side contact;
- and
- forming a buried bit line buried over the second trench and coupled to the junction region,
- wherein the forming of a buried bit line comprises;
- forming a barrier metal layer;
- forming a metal silicide on an interface between the junction region and the barrier metal layer;
- forming a metal layer over the barrier metal layer to fill the first trench and the second trench;
- and
- performing an etch-back process on the metal layer.
8 more elements
A method for fabricating a semiconductor device, comprising:
- etching a substrate to form a first trench;
- forming a first insulation layer on sidewalls of the first trench;
- etching a bottom surface of the first trench to form a second trench;
- forming a second insulation layer over the substrate structure;
- etching portions of the second insulation layer to form a side contact exposing a portion of one sidewall of the second trench;
- forming a junction region in the active region adjacent to a portion of the one sidewall exposed by the side contact;
- and
- forming a buried bit line buried over the second trench and coupled to the junction region,
- wherein the forming of a buried bit line comprises:
- forming a barrier metal layer;
- forming a metal silicide on an interface between the junction region and the barrier metal layer;
- forming a metal layer over the barrier metal layer to fill the first trench and the second trench;
- and
- performing an etch-back process on the metal layer.
11 more elements
A method for fabricating a semiconductor device, comprising:
- etching a substrate to form a first trench;
- forming a first insulation layer on sidewalls of the first trench;
- etching a bottom surface of the first trench to form a second trench using the first insulation layer as a mask;
- forming a second insulation layer over the first insulation layer and the exposed substrate by the second trench;
- etching portions of the second insulation layer to form a side contact exposing a portion of one sidewall of the second trench;
- wherein each of the first insulation layer and the second insulation layer comprises a stack structure of a liner oxide layer and a liner nitride layer.
3 more elements
Dependencies are inferred from the claim text.