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US 8,541,944 B2Granted
Display apparatus using oxide semiconductor and production thereof
AssigneeCanon Kabushiki Kaisha
InventorsMasafumi Sano, Kenji Takahashi
Life of this patent
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Abstract
A transistor includes a source terminal and a drain terminal, an active layer having an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. The gate insulating layer contains hydrogen in an amount of less than 3×1021 atoms/cm3, and an electron carrier concentration of the active layer is less than 1018/cm3.
Claims16
A transistor comprising:
- an active layer comprising an oxide containing In;
- a source electrode and a drain electrode electrically connected to the active layer;
- a gate insulating layer in contact with a first side of the active layer;
- a gate electrode, with the gate insulating layer being disposed between the gate electrode and the active layer;
- and
- an insulating layer, with the insulating layer being in contact with a second side of the active layer opposite to the first side on which the active layer is in contact with the gate insulating layer,
- wherein the gate insulating layer and the insulating layer contain hydrogen in an amount of less than 3×1021 atoms/cm3, and
- an electron carrier concentration of the active layer is less than 1018/cm3.
5 more elements
A display apparatus comprising:
- a plurality of pixels, with each pixel comprising:
- a display element;
- a transistor for driving the display element, with the transistor comprising:
- an active layer comprising an oxide containing In;
- a source electrode and a drain electrode electrically connected to the active layer;
- a gate electrode overlapped with a channel portion of the active layer;
- a first insulating layer in contact with a first side of the active layer and disposed between the gate electrode and the active layer, and
- an insulating layer, with the insulating layer being in contact with a second side of the active layer on a side opposite the first side on which the active layer is in contact with the first insulating layer,
- wherein the first insulating layer and the insulating layer each contain hydrogen in an amount of less than 3×1021 atoms/cm3, and
- wherein an electron carrier concentration of the active layer is less than 1018/cm3.
7 more elements
Dependencies are inferred from the claim text.