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US 8,541,867 B2Granted
Metal insulator metal structure with remote oxygen scavenging
AssigneeInternational Business Machines Corporation
InventorMartin M. Frank
Life of this patent
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Abstract
A structure includes a first metallic electrode, a dielectric film formed over the first metallic electrode, and a second metallic electrode formed over the dielectric film. The second metallic electrode includes an oxygen scavenging material. The oxygen scavenging material is selected such that an oxygen density decreases in a region between the first metallic electrode and the second metallic electrode responsive to elevating a temperature of the first metallic electrode, the dielectric film, and the second metallic electrode.
Claims24
A structure, comprising:
- a bottom metallic electrode;
- a dielectric film formed over the bottom metallic electrode;
- a top metallic electrode formed over and touching the dielectric film, the top metallic electrode comprising an oxygen scavenging material;
- wherein the oxygen scavenging material is a film formed in a longitudinal direction in the top metallic electrode;
- wherein in the top metallic electrode, the oxygen scavenging material is oxygen scavenging while any remaining material in the top metallic electrode is not oxygen scavenging;
- an oxygen region formed at an interface of the bottom metallic electrode and the dielectric film, the top metallic electrode being remote from and not touching the oxygen region;
- wherein the oxygen scavenging material is selected such that an oxygen density decreases in the oxygen region between the bottom metallic electrode and the top metallic electrode responsive to elevating a temperature of the bottom metallic electrode, the dielectric film, and the top metallic electrode;
- and
- an oxidized oxygen scavenging material formed in the top metallic electrode from the oxygen scavenging material, responsive to elevating the temperature which decreases the oxygen density in the oxygen region at the interface of the bottom metallic electrode and the dielectric film.
6 more elements
A structure comprising:
- a bottom metallic electrode, the bottom metallic electrode comprising an oxygen scavenging material;
- a dielectric film formed over the bottom metallic electrode;
- and
- a top metallic electrode formed over the dielectric film;
- wherein the oxygen scavenging material is a film formed in a longitudinal direction in the bottom metallic electrode;
- wherein in the bottom metallic electrode, the oxygen scavenging material is oxygen scavenging while any remaining material in the bottom metallic electrode is not oxygen scavenging;
- an oxygen region formed at an interface of the bottom metallic electrode and the dielectric film;
- wherein the oxygen scavenging material is selected such that an oxygen density decreases in the oxygen region between the bottom metallic electrode and the top metallic electrode responsive to elevating a temperature of the bottom metallic electrode, the dielectric film, and the top metallic electrode;
- and
- an oxidized oxygen scavenging material formed in the bottom metallic electrode from the oxygen scavenging material, responsive to elevating the temperature which decreases the oxygen density in the oxygen region at the interface of the bottom metallic electrode and the dielectric film.
7 more elements
A method of forming a structure, the method comprising:
- forming a dielectric film over a bottom metallic electrode;
- forming a top metallic electrode over and touching the dielectric film, the top metallic electrode comprising an oxygen scavenging material;
- wherein the oxygen scavenging material is a film formed in a longitudinal direction in the top metallic electrode;
- wherein in the top metallic electrode, the oxygen scavenging material is oxygen scavenging while any remaining material in the top metallic electrode is not oxygen scavenging;
- wherein an oxygen region is formed at an interface of the bottom metallic electrode and the dielectric film, the top metallic electrode being remote from and not touching the oxygen region;
- and
- elevating a temperature of the bottom metallic electrode, the dielectric film, and the top metallic electrode which causes an oxygen density to decrease in the oxygen region between the bottom metallic electrode and the top metallic electrode;
- wherein an oxidized oxygen scavenging material is formed in the top metallic electrode from the oxygen scavenging material, responsive to elevating the temperature which decreases the oxygen density in the oxygen region at the interface of the bottom metallic electrode and the dielectric film.
5 more elements
A method of forming a structure, the method comprising:
- forming a dielectric film over a bottom metallic electrode, the bottom metallic electrode comprising an oxygen scavenging material;
- forming a top metallic electrode over the dielectric film;
- wherein the oxygen scavenging material is a film formed in a longitudinal direction in the bottom metallic electrode;
- wherein in the bottom metallic electrode, the oxygen scavenging material is oxygen scavenging while any remaining material in the bottom metallic electrode is not oxygen scavenging;
- wherein an oxygen region is formed at an interface of the bottom metallic electrode and the dielectric film;
- and
- elevating a temperature of the bottom metallic electrode, the dielectric film, and the top metallic electrode which causes an oxygen density to decrease in the oxygen region between the bottom metallic electrode and the top metallic electrode;
- wherein an oxidized oxygen scavenging material is formed in the bottom metallic electrode from the oxygen scavenging material, responsive to elevating the temperature which decreases the oxygen density in the oxygen region at the interface of the bottom metallic electrode and the dielectric film.
5 more elements
Dependencies are inferred from the claim text.