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US 8,541,864 B2Granted
Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture
AssigneeInternational Business Machines Corporation
InventorsJoseph M. Lukaitis, Jed H. Rankin, Robert R. Robison, Dustin K. Slisher, Timothy D. Sullivan
Life of this patent
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Abstract
A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate. The substrate contact comprises a high thermal conductivity material.
Claims10
A semiconductor structure, comprising:
- a resistor on an insulator layer over a substrate;
- at least one dielectric layer over the resistor;
- and
- a substrate contact extending through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate, wherein the substrate contact comprises a high thermal conductivity material.
1 more element
Dependencies are inferred from the claim text.