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US 8,541,313 B2Granted
Method for etching a sacrificial layer for a micro-machined structure
AssigneeCommissariat a l'Energie Atomique
InventorsStéphan Borel, Jeremy Bilde
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AssigneeCommissariat a l'Energie Atomique
InventorsStéphan Borel, Jeremy Bilde
Estimating the term…
A method of etching a sacrificial layer for a micro-machined structure, the sacrificial layer positioned between a layer of a first material and a layer of a second material, the etching being carried out by an etching agent. The method includes: providing at least one species having an affinity for the etching agent greater than that of the layers of first material and second material and less than or equal to that of the sacrificial layer; and then etching the sacrificial layer by the etching agent, the etching being carried out to eliminate at least partially the sacrificial layer and then to eliminate at least partially the species.
A method of etching a sacrificial layer for a micro-machined structure, the structure comprising a first silicon layer, the sacrificial layer in SiGe epitaxied on the first silicon layer and a second silicon layer epitaxied on the sacrificial layer, the method comprising:
Dependencies are inferred from the claim text.