High performance dielectric stack for DRAM capacitor

A method for forming a capacitor stack, the method comprising:

• forming a first electrode material above a substrate, wherein the first electrode material is a metal nitride;
• forming a first ZrO2 material above the first electrode material, wherein the first ZrO2 material further contains a first dopant, wherein the first dopant is present at a concentration of less than 10 atomic %;
• forming a second ZrO2 material above the first ZrO2 material, wherein the second ZrO2 material further contains a second dopant, wherein the second dopant is present at a concentration of greater than 15 atomic %;
• forming a second electrode material on the second ZrO2 material, wherein the second electrode material is a metal nitride;
• and
• annealing the capacitor stack, wherein the first ZrO2 material is equal to or greater than 30% crystalline after the annealing and the second ZrO2 material is less than 30% crystalline after the annealing.