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US 8,541,270 B2Granted
Finlike structures and methods of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hsi Yeh, Chi-Ming Yang, Chin-Hsiang Lin
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Abstract
Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.
Claims20
A method for forming a device comprising:
- (a) forming a patterned oxide layer on a substrate, the patterned oxide layer having recesses therein;
- (b) epitaxially growing a semiconductor material on the substrate, the semiconductor material filling and overfilling the recesses;
- (c) planarizing semiconductor material until a top surface of the semiconductor material is substantially planar with a top surface of the patterned oxide layer;
- (d) subjecting the semiconductor material to an oxidizing treatment;
- and
- (e) subjecting the semiconductor material and the patterned oxide layer to an etch process.
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A method of forming a device comprising:
- forming a patterned oxide layer on a semiconductor substrate, the patterned oxide layer exposing regions of the substrate;
- epitaxially growing a fin layer on the exposed regions of the substrate to a height above that of the patterned oxide layer;
- thinning the fin layer back to a level substantially planar with the patterned oxide layer to form at least one fin;
- oxidizing a surface of the at least one fin;
- and
- etching the patterned oxide layer and the oxidized surface of the at least one fin.
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A method of forming a device comprising:
- forming on a substrate, a patterned oxide having openings formed therein;
- epitaxially growing on the substrate a semiconductor material within the openings;
- thinning back the semiconductor material;
- oxidizing a surface of the semiconductor material;
- and
- simultaneously etching the oxidized surface of the semiconductor material and the patterned oxide.
3 more elements
Dependencies are inferred from the claim text.