FinFET transistor with high-voltage capability and CMOS-compatible method for fabricating the same

A method for fabricating a FinFET on a substrate, comprising:

• providing a substrate with an active semiconductor layer on an insulator layer;
• and
• concurrently fabricating
• a) trench isolation regions in the active semiconductor layer for electrically isolating different active regions in the active semiconductor layer from each other, and
• b) trench gate-isolation regions in the active semiconductor layer for electrically isolating at least one gate region of the FinFET in the active semiconductor layer from a fin-shaped channel region of the FinFET in the active semiconductor layer;
• wherein concurrently fabricating the trench isolation regions and the trench gate-isolation regions comprises:
• fabricating first trenches in the active semiconductor layer for the trench isolation regions and second trenches in the active semiconductor layer for the trench gate-isolation regions;
• and
• filling the first trenches and the second trenches with an insulating material, thus providing the trench isolation regions and the trench gate-isolation regions.