Method for forming semiconductor structure having protection layer for preventing laser damage

A method for forming a semiconductor structure for preventing a laser beam that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage, the method comprising:

• forming a fuse block containing a set of fuses;
• forming a protection diode constructed on the semiconductor substrate and disposed directly beneath the fuse block, wherein the protection diode is electrically coupled to the set of fuses for dissipating the energy;
• forming a guard ring surrounding the set of fuses, the guard ring being constructed on at least one metal layer between the protection diode and the set of fuses for confining the energy therein;
• forming a first protection layer disposed directly beneath the fuse block, the first protection layer being comprised of a first metal layer having a dimension wider and longer than that of the fuse block to protect the protection diode and the semiconductor substrate disposed directly beneath the fuse block from being exposed to the energy, wherein the first protection layer is electrically isolated from the set of fuses by at least one dielectric layer;
• forming a protection ring structure vertically constructed within the guard ring, on one or more metal layers between the fuse and the device for enhancing a structural strength thereof;
• and
• forming a second protection layer disposed directly beneath the fuse block and above the first protection layer, the second protection layer being comprised of a second metal layer having a dimension wider and longer than that of the first protection layer to protect the underlying semiconductor substrate and the protection diode from being exposed to the energy, wherein the second protection layer is electrically isolated from the set of fuses by at least one dielectric layer.