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US 8,540,818 B2Granted
Polycrystalline silicon reactor
AssigneeMitsubishi Materials Corporation
InventorsSeiichi Kirii, Teruhisa Kitagawa
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Abstract
A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.
Claims7
A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod comprising:
- a bottom plate on which the silicon seed rod stands, having a dished upper surface formed in a recessed shape so as to descend toward a center thereof;
- an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface;
- and
- a plug which is detachably attached to the opening.
1 more element
Dependencies are inferred from the claim text.