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US 8,525,166 B2Granted
Zinc-tin oxide thin-film transistors
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Methods of forming transparent zinc-tin oxide structures are described. Devices that include transparent zinc-tin oxide structures as at least one of a channel layer in a transistor or a transparent film disposed over an electrical device that is at a substrate.
Claims20
An electrical device, comprising:
- a first device component;
- a second device component coupled to the first device component;
- and
- a transparent zinc-tin oxide structure disposed in one of the first and second device component, wherein the transparent zinc-tin oxide structure is formed by a method including:
- atomic layer depositing a first monolayer;
- atomic layer depositing a second monolayer;
- and
- processing the monolayers to form a transparent zinc-tin oxide chemical mixture of the monolayers.
5 more elements
An optical electronic device, comprising:
- an array of pixels;
- a transparent zinc-tin oxide structure electrically connecting components in the array of pixels, wherein the transparent zinc-tin oxide structure is formed by a method including:
- atomic layer depositing a first monolayer;
- atomic layer depositing at a second monolayer;
- and
- processing the monolayers to form a transparent zinc-tin oxide chemical mixture of the monolayers.
3 more elements
An electrical device, comprising:
- a transistor formed on a semiconductor substrate
- a transparent zinc-tin oxide structure electrically coupled to a component of the transistor, wherein the transparent zinc-tin oxide structure is formed by a method including:
- atomic layer depositing a first monolayer;
- atomic layer depositing a second monolayer;
- and
- processing the monolayers to form a transparent zinc-tin oxide chemical mixture of the monolayers.
3 more elements
Dependencies are inferred from the claim text.