Ashing method and ashing device
AssigneeShibaura Mechatronics Corporation
InventorKatsuhiro Yamazaki
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Abstract
An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.
Claims8
An ashing method of introducing a gas to a plasma generating chamber formed, at least in part of dielectric material, exciting said gas to generate a plasma, and performing plasma processing using said gas plasma on a processing subject in use of Low-K film, said method comprising the steps of:
- introducing a gas blend to said plasma generating chamber, wherein the gas blend is prepared as a result of preparing an inert gas to which H2 has been added at a weight ratio between 1% and 20% on a mass basis, wherein H2O is also added at a weight ratio between 0.1% and 5% on a mass basis to said inert gas to which H2 has been added;
- and
- generating plasma by exciting said gas blend and removing resist on said processing subject by hydrogen radicals that are generated.
An ashing method of introducing a gas to a plasma generating chamber formed, at least in part of dielectric material, exciting said gas to generate a plasma, and performing plasma processing using said gas plasma on a processing subject in use of Low-K film, said method comprising the steps of:
- introducing a gas blend to said plasma generating chamber, wherein the gas blend is prepared as a result of preparing an inert gas to which H2 has been added at a weight ratio between 1% and 20% on a mass basis, wherein O2 is also added at a weight ratio between 0.01% and 0.1% on a mass basis to said inert gas to which H2 has been added;
- and
- generating plasma by exciting said gas blend and removing resist on said processing subject by hydrogen radicals that are generated.
Dependencies are inferred from the claim text.