Method for forming a deep trench
AssigneeNanya Technology Corporation
InventorChung-Chiang Min
Life of this patent
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Abstract
A method for forming a deep trench includes providing a substrate with a bottom layer and a top layer; performing a first etching process to etch the top layer, the bottom layer and the substrate so as to form a recess; selectively depositing a liner covering the top layer, the bottom layer and part of the substrate in the recess; using the liner as an etching mask to perform a second dry etching to etch the recess unmasked by the liner so as to form a deep trench; performing a selective wet etching to remove the top layer; and performing a post wet etching to enlarge the deep trench.
Claims8
A method for forming a deep trench, comprising the steps of:
- providing a substrate having a pad layer formed on a top face of the substrate, wherein the pad layer comprises a first layer of a combination of oxide and nitride and a second layer of silicate glass, and the second layer is on a top surface of the first layer;
- performing a first etching process to form a first trench through the pad layer and into the substrate, wherein the first trench includes a sidewall and a bottom surface;
- after the first etching process, forming a liner to cover a top surface of the pad layer and the sidewall of the first trench, wherein the liner does not cover the bottom surface of the first trench, and wherein the sidewall of the first trench is aligned with an edge of the pad layer and an edge of the second layer;
- after forming the liner, performing a second etching process to etch the bottom surface of the first trench to form a second trench by using the liner on the pad layer as an etching hard mask;
- and
- after forming the second trench, enlarging a bottom portion of the second trench.
Dependencies are inferred from the claim text.