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US 8,507,953 B2Granted
Body controlled double channel transistor and circuits comprising the same
AssigneeGlobalfoundries Inc.
InventorFrank Wirbeleit
Life of this patent
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Abstract
By providing a body controlled double channel transistor, increased functionality in combination with enhanced stability may be accomplished. For instance, flip flop circuits usable for static RAM cells may be formed on the basis of the body controlled double channel transistor, thereby reducing the number of transistors required per cell, which may result in increased information density.
Claims12
A static RAM cell, comprising:
- a select transistor having a gate configured to receive a select signal and an input configured to receive at least one of a read signal and a write signal;
- and
- a first field effect transistor comprising:
- a gate electrode;
- a terminal coupled to the gate electrode;
- a drain region and a source region having a first conductivity type adjacent the gate electrode;
- a first body region defined between said drain region and said source region and having a second conductivity type that is other than said first conductivity type, wherein said body region is connected to an output of said select transistor to enable selective application of said at least one of a read signal and a write signal to said first body region responsive to said select signal.
4 more elements
Dependencies are inferred from the claim text.