Method for processing a substrate having a non-planar substrate surface
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsGeorge D. Papasouliotis, Vikram Singh, Heyun Yin
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Abstract
A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.
Claims17
A method of processing a substrate comprising:
- performing a first stage of implanting ions of desired species into first and second surfaces of the substrate, the first surface extending in a horizontal direction relative to a plane of the substrate and the second surface extending in a vertical direction relative to the plane of the substrate, wherein amount of the ions of desired species implanted into the first surface is greater than the amount of ions implanted into the second surface;
- performing a second stage of depositing a first film having a first thickness on the first surface of the substrate;
- performing a third stage of implanting the ions of desired species into the second surface of the substrate after the second stage, wherein the amount of the ions of desired species implanted into the second surface during the third stage is greater than the amount of the ions of desired species implanted into the first surface during the third stage;
- and
- depositing a second film having a second thickness on the second surface of the substrate during the second stage.
A method of processing a substrate in a plasma based system, the substrate comprising a first surface extending in a horizontal direction relative to a plane of the substrate and a second surface extending in a vertical direction relative to the plane of the substrate, the plasma based system comprising a process chamber, a plasma source, a platen disposed within the process chamber, and a bias source, the method comprising:
- introducing the substrate into the process chamber;
- generating in the process chamber plasma containing ions of desired species;
- applying a first bias to the substrate and implanting a first dose of the ions into a first region of the substrate adjacent to the first surface and a second dose of the ions into a second region of the substrate adjacent to the second surface, wherein the first dose is greater than the second dose;
- applying a second bias to the substrate and depositing a first film having a first thickness on the first surface;
- and
- applying a third bias to the substrate and implanting third dose of the ions into the first region and a fourth dose of the ions into the second region, wherein the fourth dose is greater than the third dose.
A method of processing a substrate comprising a first surface extending in a horizontal direction relative to a plane of the substrate and a second surface extending in a vertical direction relative to the plane of the substrate, the method comprising:
- doping a first region of the substrate adjacent to the first surface and a second region of the substrate adjacent to the second surface with dopants, wherein dose of the dopants in the first region is greater than the dose of the dopants in the second region;
- depositing a first film having a first thickness on the first surface of the substrate;
- and
- doping the second region of the substrate after depositing the first film until the dose of the dopants in the second region after depositing the first film is substantially equal to the dopants in the first region after depositing the first film.
Dependencies are inferred from the claim text.