Iterative rinse for semiconductor fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Yao Lee, Wei-Hong Chuang, Li-Shiuan Chen, Ping-Hsi Yang
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Abstract
An iterative rinse for fabrication of semiconductor devices is described. The iterative rinse includes a plurality of rinse cycles, wherein each of the plurality of rinse cycles has a different resistivity. The plurality of rinse cycles may include a first rinse of a semiconductor substrate with de-ionized (DI) water and carbon dioxide (CO2), followed by a second rinse the semiconductor substrate with DI water and CO2. The first rinse has a first resistivity; the second rinse has a second resistivity lower than the first resistivity.
Claims19
A semiconductor fabrication method, comprising:
- providing a semiconductor substrate having a surface;
- performing a first rinse of the surface of the semiconductor substrate with de-ionized (DI) water and carbon dioxide (CO2), wherein the first rinse has a first resistivity;
- and
- performing a second rinse of the surface of the semiconductor substrate with DI water and CO2, wherein the second rinse has a second resistivity lower than the first resistivity.
A method, comprising:
- providing a semiconductor substrate having a first layer;
- patterning a photosensitive layer overlying the first layer;
- and
- rinsing the semiconductor substrate including the first layer and the patterned photosensitive layer with CO2 water, wherein the CO2 water is de-ionized water (DI) with carbon dioxide added to the DI water, wherein the rinsing includes providing a first resistivity of CO2 water and subsequently providing a second resistivity of CO2 water to the semiconductor substrate.
A method of semiconductor fabrication, comprising:
- performing an iterative rinse on a semiconductor substrate, wherein the iterative rinse includes a plurality of successive rinse cycles, wherein each of the successive rinse cycles has a lower resistivity and each of the rinse cycles include a different amount of carbon dioxide dissolved in de-ionized water.
Dependencies are inferred from the claim text.